20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 triacs silicon bidirectional triode thyristors ... designed primarily for industrial and military applications for the control of ac loads in applications such as power supplies, heating controls, motor controls, welding equipment and power switching systems; or wherever full-wave, silicon gate controlled solid-state devices are needed. ? glass paaslvated junctions and center gate fire ? press fit stud ? T6400 stud ?t6410 isolated stud ? t6420 ? gate triggering guaranteed in all 4 quadrants maximum ratings T6400 t6410 t6420 series triacs 40 amperes rms 200 thru 800 volts m w-t>0 rating peak repetitive off-state voltage, note 1 (tj = -65 to + 110c) gate open T6400b, t6410b, t6420b T6400d, t6410d, t6420d T6400m, t6410m, t6420m T6400n, t6410n, ts420n on-state current rms tc (pressfit) = 70c (conduction angle = 360") tc (stud) - 65c peak surge current (non-repetitive) (one full cycle, 60 hz) circuit fusing (tj = -65 to + 110"c,t = 1.26 to 10ms) peak gate power (pulse width ?=? 10 pa) average gate power peak gate current (pulse width = 1 /is) operating temperature range storage temperature range stud torque symbol vdrm itirmsi itsm |2t pgm pg(av) igtm tc tstg - value 200 400 600 800 40 300 460 40 0.7b 12 -65 to +110 -65 to +150 30 unit volts amps amps a2s watts watt amps ?c ?c in. ib. thermal characteristics characteristic thermal resistance, junction to case pressfit stud isolated stud symbol "fljc max 0.8 0.9 1 unit c/w t6410 stud T6400 press fit t6420 isolated stud note 1. ratings apply for opan gate conditions. thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
t8400 ? t6410 ? t6420 series electrical characteristics (tc = 25c unless otherwise noted.) characteristic peak forward or reverse blocking current (rated vdrm or vrrm, gate open) tj = 25c tj = 110c maximum on-state voltage (either direction) (it = 100 a peak) gate trigger current (continuous do), note 1 (vd = 12 vdc, rl = 30 ohms vmt2i+). vg< + ) vmt2( + )' vg(-) vmt2(-)-vg(-| vmt2(-)'vg( + ) vmt2( + ). vg( + ), vmt2(-).vg(-). tc - -65"c vmtzi + ). vg< - ). vmt2( - ), vg( + j, tc - - 65-c gate trigger voltage (continuous dc) (vo = 12 vdc, rl - 30 ohms, tc = 25"c tc = ~65c (vo - rated vdrm- rl - 125 ohms, tc = 110c) holding current (either direction) (vd = 12 vdc, gate open) (initiating current = 500 ma) tc - 25c tc - -65?c gate controlled turn-on time (rated vqrm, if = 60 a, iqj = 200 rna, rise time - 0.1 fis) critical rate of rise of commutation voltage, on-state conditions (di/dt = 22 a/ms, gate unenerglzed, vq - rated vdrqm- it(rms) = ^o a, tc (pressfit) = 70'c) tc (stud) - b5"c symbol idrm, irrm vtm "ct vgt iho ?gt dv/dt(c) mln - ' ? - 0.2 - ~~ typ _ 1.5 15 30 20 40 1.35 25 1.7 5 max 10 4 2 50 80 so 80 125 240 2.5 3.4 60 100 3 unit ma ma volts ma volts ma ms v//is note 1. all voltage polarities referenced to main terminal 1. figure 1 - on-state power dissipation figure 2 - rms current derating current waveform ? sinusoidal load " resistive or inductive conduction angle- "iii 10 2d 30 it(rms). fullcycle rms on-state current (amp) t, maximum allowable case temperature (ci ssssslii i current waveform sinusoi -load ? resistive dr inductiv conduction angle ? 360" i -^ 71 ?^ r o ,80" | y conduction a ??l*?lll ?"iii 360 4gle iso stu oal % ated jtype s/ ^ i^ ? ^.pre! s* ^ ks s-fit 1 ?udt1 vpes pes 10 20 30 40 itirmsi. rm$ on state current iampi
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